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M62021L/P/FP
System Reset IC with Switch for Memory Backup
REJ03D0784-0200 Rev.2.00 Jun 15, 2007
Description
The M62021 is a system IC that controls the memory backup function of microcomputer (internal RAM). The IC outputs reset signals (RES/RES) to a microcomputer at power-down and power failure. It also shifts the power supply to RAM from main to backup, outputs a signal (CS) that invokes standby mode, and alters RAM to backup circuit mode. The M62021 contains, in a single chip, power supply monitor and RAM backup functions needed for a microcomputer system, so that the IC makes it possible to construct a system easily and with fewer components compared with a conventional case that uses individual ICs and discrete components.
Features
* * * * * * * * Built-in switch for selection between main power supply and backup power supply to RAM. Small difference between input and output voltage (IOUT = 80 mA, VIN = 5 V) 0.2 V Typ Detection voltage (power supply monitor voltage) 4.40 V 0.2 V Chip select signal output (CS) Two channels of reset outputs (RES/RES) Power on reset circuit built-in Delay time variable by an external capacitance connected to Ct pin Facilitates to form backup function with a few number of components
Application
* Power supply control systems for memory backup of microcomputer system and SRAM boards with built-in backup function that require switching between external power supply and battery.
Block Diagram
SW VIN 3 R1 - R2 + 1.24V 8 CS Com Reset circuit D1 2 VBAT 1 VOUT
RES 7 RES 5
Delay circuit
4 Ct
6 GND
REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 1 of 13
M62021L/P/FP
Pin Arrangement
M62021L 8 CS 7 RES 6 GND 5 RES VOUT 1 VBAT 2 VIN 3 Ct (Delay capcitance) 4 (Top view) Outline: PRDP0008AA-A (8P4) [P] PRSP0008DE-C [FP] (recommend) PRSP0008DA-A (8P2S-A) [FP] (not recommend for new design) M62021P M62021FP 8 CS 7 RES 6 GND 5 RES
4 Ct (Delay capcitance) 3 VIN 2 VBAT 1 VOUT (Top view) Outline: PRSS0008AA-A (8P5) [L]
REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 2 of 13
M62021L/P/FP
Absolute Maximum Ratings
(Ta = 25C, unless otherwise noted)
Item Input voltage Output current Power dissipation Symbol VIN IOUT Pd Ratings 7 100 800 625 440 Thermal derating K 8 6.25 4.4 -20 to +75 -40 to +125 mW/C Unit V mA mW 8-pin SIP 8-pin DIP 8-pin SOP Ta 25C 8-pin SIP 8-pin DIP 8-pin SOP C C Conditions
Operating temperature Storage temperature
Topr Tstg
Electrical Characteristics
(Ta = 25C, unless otherwise noted)
Item Detection voltage Hysteresis voltage Temperature coefficient of detection voltage Circuit current Difference between input and output voltage Ct output voltage (high level) Ct output voltage (low level) RES output voltage (high level) RES output voltage (low level) RES output voltage (high level) RES output voltage (low level) CS output voltage (high level) CS output voltage (low level) Backup diode leakage current Backup diode forward direction voltage Delay time Response time RES limit voltage of operation Symbol VS VS VS/T ICC VDROP VOH(Ct) VOL(Ct) VOH(RES) VOL(RES) VOH(RES) VOL(RES) VOH(CS) VOL(CS) IR VF tpd td VOPL(RES) Min 4.2 50 -- -- -- -- -- 4.5 -- 3.5 -- -- 4.5 -- -- 3.50 2.40 -- -- -- -- -- 10 -- -- Typ 4.4 100 0.005 2.0 7.5 0.125 0.2 5.0 0.02 4.0 0.02 0.05 5.0 0.02 0.05 3.57 2.47 0.08 0.1 -- -- 0.54 27 5.0 0.65 Max 4.6 200 -- 4.0 12.0 0.25 0.4 -- 0.1 -- -- 0.2 -- -- 0.2 -- -- -- 0.3 0.5 0.5 0.6 55 25.0 -- Unit V mV %/C mA V V V V V V V V V A V ms s V IOUT = 0mA VIN = 5V VIN = 5V *
1 1
Test Conditions VIN (at the change from HL) VS = VSH - VSL
VIN = 4V VIN = 5V IOUT = 50mA IOUT = 80mA
VIN = 4V * 1 VIN = 4V * VIN = 5V VIN = 5V * VIN = 4V VIN = 4V *
1
* Isink = 1mA *
1
1
Isink = 1mA
2 2
VIN = 0V, VBAT = 3V * 1 VIN = 5V * VBAT = 3V IF = 10A
Isink = 1mA VIN = 5V VIN = 0V
VIN = 0V5V, Ct = 4.7F VIN = 5V4V *
3
Notes: 1. Regarding conditions to measure VOH and VOL, voltage values are to be generated by internal resistance only and no external resistor is used. 2. These values are produced inserting an external resistor, RCS = 1 M, between the CS pin and GND. 3. With no external resistor (10 k internal resistance only)
REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 3 of 13
M62021L/P/FP
Test Circuit
V M62021 SW2 A Im1 Vm1 V 1 V1 SW1 2 VIN 3 R1 - R2 + 1.24V 8 Com Reset circuit D1 2 VBAT 1 SW4 3 2 V2 RES RES Delay circuit Ct V Vm3 IF2 1 VOUT SW5 Vm2 1 SW6 2 3 4 5 6 CRT SW7 1 2 Vm4 V
IF1
CS Im2 A
7 5
4
6 GND
SW3
+
4.7F
Figure 1 Test Circuit
Switch Matrix
Item Circuit current VOUT CS Detection voltage Ct (VIN negative-going) RES RES Difference between input and output voltage Ct output voltage (high level) Ct output voltage (low level) RES output voltage (high level) RES output voltage (low level) RES output voltage (high level) RES output voltage (low level) CS output voltage (high level) *1 CS output voltage (low level) Backup diode leakage current Backup diode forward direction voltage Delay time Response time VOUT CS RES RES Symbol ICC V1 4V 5V V2 -- IF1 -- IF2 -- 1 1 2 ON 3 OFF SW 4 1 5 OFF 6 1 2 3 4 5 6 2 4 7 1 Measuring Instrument Im1 * Vm4 CRT Vm1 Vm2 Vm4
2
VS (VSL)
Decrease from 5V
--
--
--
1
ON
OFF
1
OFF
1
VDROP VOH(Ct) VOL(Ct) VOH(RES) VOL(RES) VOH(RES) VOL(RES) VOH(CS) VOL(CS) IR VF
5V 5V 4V 4V 5V 5V 4V 4V 0V 5V 5V 0V 0V
-- --
-50mA -80mA -- -- 1mA
-- --
1 1
ON ON
OFF OFF
1 1
OFF OFF
2 1 1 2
--
--
1
ON
OFF
1
OFF
5
Vm4
-- -- 3V -- 3V --
-- 1mA -- 1mA -- --
--
1
ON
OFF
1
OFF
6
1 2 1 2
Vm4
--
1
ON
OFF
1
OFF
3
Vm4
-- 10A
1 1
ON ON
OFF OFF
2 3
OFF ON
1 1 2 3 5 6
1 1
Im2 Vm3
tpd td
--
--
--
--
2 *3
ON
ON *4
1
OFF
1
CRT
Notes: 1. To measure VOH(CS), insert a 1 M resistor between the CS pin and GND. 2. While monitoring each output by Vm4 or CRT, measure the input voltage Vm1 when the output goes from H to L and L to H. Regarding VSH, raise VIN from 4 V and measure the input voltage Vm1 when the output goes from H to L and L to H. VS is VSH - VSL. 3. To measure delay time, change VIN from 0 V to 5 V and compare, with respect to each pin, the positive-going edge observed on a monitor with that of VIN. To measure response time, change VIN from 5 V to 4 V and compare, with respect to each pin, the negative-going edge observed on a monitor with that of VIN. 4. Set the switch to OFF when measuring response time.
REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 4 of 13
M62021L/P/FP
Pin Description
Pin No. 1 Pin Name Power supply output Symbol VOUT Function VIN and VBAT are controlled by means of an internal switch and output through VOUT. The pin is capable of outputting up to 100 mA. Use it as VDD of CMOS RAM and the like. Backup power supply is connected to this pin. If a lithium battery is used, insert a resistor in series for safety purposes. +5 V input pin. Connect to a logic power supply. A delay capacitor is connected to this pin. By connecting a capacitor, it is possible to delay each output. Connect to the positive reset input of a microcomputer. The pin is capable of flowing 1 mA sink current. Reference for all signals. Connect to the negative reset input of a microcomputer. The pin is capable of flowing 1 mA sink current. Connect to the chip select of RAM. The CS output is at low level in normal state thereby letting RAM be active. Under failure or backup condition, the CS output is set to high level, then RAM enters standby state disabling read/write function. The pin is capable of flowing a 1 mA sink current.
2 3 4 5 6 7 8
Backup power supply input Power supply input Delay capacitor connection pin Positive reset output Ground Negative reset output Chip select output
VBAT VIN Ct RES GND RES CS
Application Example
Note)2 M62021 +5V (Main power supply) CIN VDD R2 1.24V
+
VIN 3 R1 - + Com
SW
VOUT 1
+
COUT
D1 Reset circuit VBAT 2
+
VDD
Battery 3V CMOS RAM
CS 8 Ct 4
+
MCU or CPU
RES 7 RES 5
Delay circuit
C1
Note)1
6 GND Notes: * Capacitance to be connected: CIN: 10F, COUT: 4.7F, Ct: 4.7F 1. If connecting a zener diode, select one of VZ 2V to 3V. (IZ = 0.1mA) 2. When it is necessary to charge the back-up power supply such as using the large-capacity capacitor, connect it to VIN via a diode and a protection resistor.
Figure 2 Application Example
REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 5 of 13
M62021L/P/FP
Configuration
Power Supply Detection The internal reference voltage Vref is compare by means of a comparator with resistor-divided voltage VR (resistordivided voltage produced by R1 and R2 from VIN). If the input voltage is 5 V, VR is set to 1.24 V or higher, so the comparator output is at low level and the Ct output (Q1 collector output) is set to high level. If the input voltage drops to below 4.4 V in an abnormal condition, VR becomes below 1.24 V, so the comparator output goes from low to high level and the Ct output, from high to low. The input voltage at this point is called VSL. Next, when the input voltage, restored from abnormal state, has a rise, the comparator output goes from high to low level and the Ct output, from low to high. The comparator used for detection has 100 mV hysteresis (VS), so that malfunctioning is prevented in case that the input voltage slowly drops or VR nearly equals Vref.
5
Ct Output VO (Ct) (V)
4 3 2
VSL VSH VS
1 0 4.0
4.2
4.4
4.6
4.8
5.0
Input Voltage VIN (V)
Figure 3 Delay Circuit Connecting an external capacitor to the Ct pin lets RES, RES, CS, and VOUT be delayed due to RC transient phenomenon (electric charge). Delay time is determined as follows.
Delay time (tpd) = C1 x (R3 + R4) x 1n = C1 x 22k x 0.2614 5.75 x 103 x C1 * C is an external capacitance. [VOH(Ct) - VOL(Ct)] [VOH(Ct) - INV1(VTH)]
Taking into consideration the time taken by the oscillator of microcomputer to be stable, connect a 4.7 F capacitor to the Ct pin. (As the response time of detection can be slowed due to internal structure depending in the rising rate of power supply, avoid connecting a too large capacitance.)
tpd VOH(Ct)
INV1(Vth) VOL(Ct)
Figure 4 Delayed Output Waveforms of Ct
REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 6 of 13
M62021L/P/FP Schmitt Trigger Circuit Since waveforms show a gentle rise due to the RC delay circuit, INV1, INV2, R5, and R6 constitute a Schmitt trigger circuit to produce hysteresis so as to prevent each output from chattering.
Internal Circuit
Ct 4 VIN 3 RES 5 RES 7 Q4
R3 22k R4 47 VR R6 R5 10k 47k R7 10k R8 10k R10 800 R11 10k
1 VOUT
R1 60.94k Com
D1 2 VBAT
Q2
INV1 INV2 INV3 INV4
- +
R2 24k Vref 1.24V
Q1
INV5 INV6 INV7 R9 INV8 INV9 5k R10 22k
Q3
8 CS
Q5 6 GND
Figure 5 Internal Circuit
REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 7 of 13
M62021L/P/FP
Timing Chart
tpd 5V VS VSH VSL tpd
VIN
0V
V1 V2 V3 V4 V5
VOUT
V2
CS
V4 V5
VOL(CS) 5V VIN(VSL)
RES
VOL(RES) VOH(RES) VIN(VSL)
RES
VOL(RES) V1 = VIN - VDROP V2 = VIN - Q4VEB(Di) V3 = VIN(VSL) - VDROP V4 = VIN(VSL) - Q4VEB(Di) V5 = VBAT - VF
Figure 6 Timing Chart
Input Voltage In Failure (Instantaneous Drop) Input voltage: 5V4V Each output varies if the input voltage drops to VSL or under Restoration from Failure (Instantaneous Drop) Input voltage: 4V5V If the input voltage goes higher than VSL by 100mV, each output varies after delay produced by the delay circuit Q4 is turned ON after delay and a voltage (VIN - VDROP) is output. A logic high is maintained, and than shifts to a logic high.
In Normal Operation Input voltage: 5V
In Backup State Input voltage: 0V Backup voltage: 3V
Output Pin VOUT With Q4 set to ON, a voltage (VIN - VDROP) is output The output level is VOL (RES) with a logic low Q4 is turned OFF. A voltage (VIN - Q4VEB(Di)) is output by the diode between E and B of Q4. As the state shifts from a logic low to logic high, the output level becomes approximately equal to the input voltage. As the state shifts from a logic high to logic low, the output level becomes VOL (RES). As the state shifts from a logic low to logic high, the output level becomes the voltage VIN - Q4VEB(Di).
VBAT - VF
RES
--
RES
The output level is VOH (RES) with a logic low The output level is VOL (CS) with a logic low
A logic low is held, and than shifts to a logic high. A logic high is maintained, and than shifts to a logic high.
--
CS
The output is a logic high and the output level is VBAT - VF
REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 8 of 13
M62021L/P/FP
Typical Characteristics
Thermal Derating (Maximum Rating) 1000
Power Dissipation Pd (mW)
Circuit Curent vs. Input Voltage 16
Circuit Curent ICC (mA)
800 600
M62021L M62021P M62021FP
14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8
400 200 0 0
25
50
75
100
125
Ambient Temperature Ta (C)
Input Voltage VIN (V)
Detection Voltage vs. Ambient Temperature 4.48
Detection Voltage VS (V)
Hysteresis Voltage vs. Ambient Temperature 140
Hysteresis Voltage VS (mV)
Tj = 25C
4.46 4.44 4.42 4.40 4.38 4.36 4.34 4.32 -40 -20 0 20 40 60 80 100 120
130 120 110 100 90 80 70 60 -40 -20 0 20 40 60 80 100 120
Ambient Temperature Ta (C)
Ambient Temperature Ta (C)
Circuit Curent vs. Ambient Temperature 10
VIN = 5V
Circuit Curent vs. Ambient Temperature 4.0
VIN = 4V
Circuit Curent ICC (mA)
Circuit Curent ICC (mA)
9 8 7 6 5 4 3 2 -40 -20 0 20 40 60 80 100 120
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -40 -20 0 20 40 60 80 100 120
Ambient Temperature Ta (C)
Ambient Temperature Ta (C)
REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 9 of 13
M62021L/P/FP
Output Curent vs. Difference between Input and Output Voltages 100
VIN = 5V
Difference between Input and Output Voltages VDROP (mV)
Difference between Input and Output Voltages vs. Ambient Temperature 400
VIN = 5V
Output Curent IOUT (mA)
350 300 250 200 150 100 50 0 -40 -20 0 20 40 60 80 100 120
IOUT = 100mA IOUT = 80mA IOUT = 50mA
80 60 40 20 0 0
50
100
150
200
250
Difference between Input and Output Voltages VDROP (mV)
Backup Di Forward Direction Current IF (A)
Ambient Temperature Ta (C) Backup Di Forward Direction Voltage vs. Ambient Temperature 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -40 -20 0 20 40 60 80 100 120
IF = 100A IF = 10A IF = 1A
140 120 100 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Backup Di Forward Direction Voltage VF (V) RES "L" Output Voltage vs. Ambient Temperature 80
VIN = 5V 70 Isink = 1mA
Backup Di Forward Direction Voltage VF (V)
Backup Di Forward Direction Current vs. Backup Di Forward Direction Voltage 160
Ambient Temperature Ta (C) RES "L" Output Voltage vs. Ambient Temperature 80
VIN = 4V
RES "L" Output Voltage VOL(RES) (mV)
RES "L" Output Voltage VOL(RES) (mV)
70 Isink = 1mA 60 50 40 30 20 10 0 -40 -20 0 20 40 60 80 100 120
60 50 40 30 20 10 0 -40 -20 0 20 40 60 80 100 120
Ambient Temperature Ta (C)
Ambient Temperature Ta (C)
REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 10 of 13
M62021L/P/FP
CS "L" Output Voltage vs. Ambient Temperature CS "H" Output Voltage vs. Ambient Temperature 4.0
VIN = 4V
VIN = 5V 140 Isink = 1mA
160
CS "H" Output Voltage VOH(CS) (mV)
CS "L" Output Voltage VOL(CS) (mV)
3.8 RCS = 1M 3.6 3.4 3.2 3.0 2.8 2.6 2.4 -40 -20 0 20 40 60 80 100 120
120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120
Ambient Temperature Ta (C) Delay Time vs. External Capacitance Connected to the Ct Pin 1000
VIN = 0V5V
Ambient Temperature Ta (C)
Delay Time vs. Ambient Temperature 40
VIN = 0V5V
35 Ct = 4.7F
Delay Time tpd (ms)
Delay Time tpd (ms)
30 25 20 15 10 5
100
10
1 0.1
1
10
100
0 -40 -20 0
20 40 60 80 100 120
External Capacitance Connected to the Ct Pin Ct (F)
Ambient Temperature Ta (C)
REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 11 of 13
M62021L/P/FP
Package Dimensions
JEITA Package Code P-SIP8-6.4x19-2.54 RENESAS Code PRSS0008AA-A Previous Code 8P5 MASS[Typ.] 0.73g
19.0
0.2
2.8
0.2
6.4
1.2 Min
2.54
0.5
0.1
0.85
+0.3 -0.1
3.0 Min
8.3 Max
1.2 0.1
+0.07 -0.05
1.2 +0.1 -0.3
0.27
JEITA Package Code P-DIP8-6.3x8.84-2.54
RENESAS Code PRDP0008AA-A
Previous Code 8P4
MASS[Typ.] 0.5g
8
5
c
1
4
*1
e1
E
*2 D
NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
A
Reference Symbol
A2
Dimension in Millimeters
SEATING PLANE *3 b 3 bp e *3 b 2
e1 D E A A1 A2 bp b2 b3 c e L
Min Nom Max 7.32 7.62 7.92 8.7 8.9 9.1 6.15 6.3 6.45 4.5 0.51 3.3 0.4 0.5 0.6 0.9 1.0 1.3 1.4 1.5 1.8 0.22 0.27 0.34 15 0 2.29 2.54 2.79 3.0
REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 12 of 13
L
A1
M62021L/P/FP
JEITA Package Code P-SOP8-4.4x4.85-1.27 RENESAS Code PRSP0008DE-C Previous Code -- MASS[Typ.] 0.1g
*1
D
F
8
5
NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET.
bp
HE E
*2
Index mark
Terminal cross section ( Ni/Pd/Au plating )
1 Z e 4
*3
c
Reference Symbol
Dimension in Millimeters
bp
x
M L1
A1
L
y
Detail F
D E A2 A1 A bp b1 c c1 HE e x y Z L L1
A
A2
Min Nom Max 4.65 4.85 5.05 4.2 4.4 4.6 1.85 0.00 0.1 0.20 2.03 0.34 0.4 0.46 0.15 0.20 0.25 0 8 5.7 6.2 6.5 1.12 1.27 1.42 0.12 0.10 0.75 0.25 0.45 0.65 0.90
JEITA Package Code P-SOP8-4.4x5-1.27
RENESAS Code PRSP0008DA-A
Previous Code 8P2S-A
MASS[Typ.] 0.07g
8
5
HE
*1
E
F
1
Index mark
4
NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
c
A2 A1
*2
D
Reference Symbol
Dimension in Millimeters
*3 e y
bp
D E A2 A1 A bp c HE e y L
Detail F
Min Nom Max 4.8 5.0 5.2 4.2 4.4 4.6 1.5 0.05 1.9 0.35 0.4 0.5 0.13 0.15 0.2 0 10 5.9 6.2 6.5 1.12 1.27 1.42 0.1 0.2 0.4 0.6
A
REJ03D0784-0200 Rev.2.00 Jun 15, 2007 Page 13 of 13
L
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
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